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R1EV58064BDANBI#B2

Part No :

R1EV58064BDANBI#B2

Manufacturer
Intersil (Renesas Electronics America)
Description
IC EEPROM 64KB C-MOS 28DIP
Catalog
Memory
DataSheet
R1EV58064BDANBI#B2 PDF
Unit Price
詢價QQ咨詢
Stock Num
0
Min Qty
125
Series
R1EV58064BxxN
Package
Tray

R1EV58064BDANBI#B2 Specifications

Type Description
rohs: RoHS
technology: EEPROM
access time: 100 ns
memory size: 64Kb (8K x 8)
memory type: Non-Volatile
part status: Last Time Buy
memory format: EEPROM
mounting type: Through Hole
package / case: 28-DIP (0.600", 15.24mm)
clock frequency: -
memory interface: Parallel
voltage - supply: 2.7V ~ 5.5V
operating temperature: -40°C ~ 85°C (TA)
supplier device package: 28-DIP
write cycle time - word, page: 10ms